PART |
Description |
Maker |
ATA12001 ATA12001D1C |
AGC transimpedence amplifier suitable for SONET OC-24 receiver, low noise RF amplifier, BISDN and HIPPI applications. Transimpedance Amplifiers (TIAs) AGC Transimpedance Amplifier
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
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SE1020W SE1020 |
1.25 Gb/s Transimpedance Amplifier Product Preview Amplifier, 1.25Gb/s Transimpedance Amplifier
|
SiGe Semiconductor, Inc... SiGe Semiconductor Inc. SIGE[SiGe Semiconductor, Inc.]
|
M02013-XX |
CMOS Transimpedance Amplifier with AGC Intended for Fiber-optic Networks up to 3.2 Gbps
|
Mindspeed Technologies
|
TGA4805-EPU |
10GB/s Differential Transimpedance Amplifier 10 GB/s Differential Transimpedance Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
VSC7728 VSC7718 |
GPON and GE-PON OLT Transimpedance Amplifier and Limiting Amplifier Chipset
|
Vitesse Semiconductor Corporation
|
R12K09 R12H12 R12H15 R12K05 R05J12 R05J15 R05J09 R |
and a transimpedance amplifier on a single monolithic IC. The TSL250RD and TSL260 RD have an equivalent feedback resistance of 16 Megohm and a transimpedance amplifier (feedback resistor = 16 Megohm, 8 Megohm and 2.8 Megohm, respectively) on a single monolithic IC. Output voltage is directly EUROLINE - DC/DC - CONVERTER converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light CAPACITOR 0805 X7R 4.7NF 100V 10市ACITOR 0805 X7R 4.7NF 100V 10%; CAPACITANCE:4.7NF; VOLTAGE RATING, DC:100V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:B37941; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. RoHS Compliant: Yes
|
RECOM Power Inc.
|
SFT-0100 |
Transimpedance Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
SA5211 SA5211D |
Transimpedance amplifier 180MHz
|
NXP Semiconductors N.V.
|
UV-TIAMO-S |
integrated transimpedance amplifier
|
Roithner LaserTechnik G...
|
ATA06212AD1C |
AGC TRANSIMPEDANCE AMPLIFIER
|
ANADIGICS Inc ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
MAX24011E/DGR1 |
2.5Gbps Transimpedance Amplifier
|
MAXIM - Dallas Semiconductor
|